期刊
JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 505, 期 -, 页码 148-153出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2017.05.082
关键词
MoSe2 nanosheets; Memory device; Ag filaments; Resistive switching; Hydrothermal
资金
- National Natural Science Foundation of China [21276220]
- Natural Science Foundation of Jiangsu Province [BK20150431]
- Research Foundation of Yancheng Institute of Technology [KJC2014004]
- Jiangsu Collaborative Innovation Center for Ecological Building Materials and Environmental Protection Equipments [CP201506]
- Hebei Province Population Health Information Engineering Technology Research Center [SG2015001]
- Youth Fund of Science and Technology of Hebei Colleges, China [QN2017010]
In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour. (c) 2017 Elsevier Inc. All rights reserved.
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