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Review of metal oxide semiconductors-based thin-film transistors for point-of-care sensor applications

期刊

JOURNAL OF INFORMATION DISPLAY
卷 21, 期 4, 页码 203-210

出版社

TAYLOR & FRANCIS LTD
DOI: 10.1080/15980316.2020.1714762

关键词

AMD; oxide semiconductor; thin-film transistor; biosensor

资金

  1. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2017R1D1A1B03030818]
  2. National Research Foundation of Korea [2017R1D1A1B03030818] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Recently, oxide semiconductors-based thin-film transistors have received much attention for biosensor platforms due to their high sensitivity, good chemical resistance, easy surface immobilizations of bioreceptors, and easy fabrication process with solution process or sputtering method. Unlike Si technologies, oxide semiconductors-based thin-film transistors can be fabricated easily and it is highly attractive to make simple sensor arrays. For long-term health-care monitoring, high sensitivity, selectivity, and low-cost chip should be considered. Regarding these issues, metal oxide semiconductors and thin-film transistors are good candidates. Here we address state-of-the-art research trends of biosensors with metal oxide semiconductors-bases thin-film transistors and discuss solution-processing and sputtering methods, separately.

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