期刊
ADVANCED QUANTUM TECHNOLOGIES
卷 3, 期 2, 页码 -出版社
WILEY
DOI: 10.1002/qute.201900034
关键词
epitaxial growth technology; heterogeneous photonic integration; quantum dots; quantum photonic devices; wavelength tuning
资金
- National Key R&D Program of China [2018YFA0306100]
- National Natural Science Foundations of China [11874437, 11704424]
- Natural Science Foundation of Guangdong Province [2018B030311027, 2017A030310004, 2016A030310216]
- Guangzhou Science and Technology project [201805010004]
Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site-controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据