期刊
NANOSCALE ADVANCES
卷 2, 期 1, 页码 401-407出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9na00618d
关键词
-
资金
- Ministry of Science and Technology of Republic of China [MoST 107-2221-E-009-042-MY3]
In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m(-2) and current efficiency of 27.2 cd A(-1) were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.
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