4.6 Article

Two-dimensional higher-order topology in monolayer graphdiyne

期刊

NPJ QUANTUM MATERIALS
卷 5, 期 1, 页码 -

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41535-019-0206-8

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资金

  1. Institute for Basic Science in Korea [IBS-R009-D1]
  2. National Research Foundation of Korea (NRF) [0426-20180011]
  3. POSCO Science Fellowship of POSCO TJ Park Foundation [0426-20180002]
  4. U.S. Army Research Office [W911NF-18-1-0137]
  5. National Research Foundation of Korea [CG075101, IBS-R009-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Based on first-principles calculations and tight-binding model analysis, we propose monolayer graphdiyne as a candidate material for a two-dimensional higher-order topological insulator protected by inversion symmetry. Despite the absence of chiral symmetry, the higher-order topology of monolayer graphdiyne is manifested in the filling anomaly and charge accumulation at two corners. Although its low energy band structure can be properly described by the tight-binding Hamiltonian constructed by using only the p(z) orbital of each atom, the corresponding bulk band topology is trivial. The nontrivial bulk topology can be correctly captured only when the contribution from the core levels derived from p(x,y) and s orbitals are included, which is further confirmed by the Wilson loop calculations. We also show that the higher-order band topology of a monolayer graphdyine gives rise to the nontrivial band topology of the corresponding three-dimensional material, ABC-stacked graphdiyne, which hosts monopole nodal lines and hinge states.

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