期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 2, 期 1, 页码 301-308出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00791
关键词
InGaZnO (IGZO); thin-film transistors (TFTs); self-assembled monolayer (SAM); surface modification; 1 V operation
资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1, EP/L01548X/1]
- North-West Nanoscience Doctoral Training Centre, EPSRC [EP/G03737X/1]
- National Key Research and Development Program of China [2016YFA0301200]
- National Natural Science Foundation of China [11374185, 11304180]
- EPSRC [EP/N021258/1] Funding Source: UKRI
The use of amorphous InGaZnO (IGZO) has become more and more popular especially in display technologies because of its high mobility, excellent large area uniformity, and low-temperature processability. However, unlike Si-based thin-film transistors (TFTs), the top channel surface of IGZO TFTs is extremely sensitive to air, resulting in a degraded device performance, particularly when a very-thin channel layer is used. To avoid such detrimental effects and improve the device performance, a top surface treatment such as encapsulation is necessary. In this work, very thin, 1 V IGZO TFTs with top surface modified by a self-assembled monolayer (SAM) were studied. The electrical performance of the presented TFTs was significantly enhanced after the SAM modification because of a much reduced desorption-adsorption effect on the IGZO surface. The importance of top surface condition on TFTs with ultrathin channel layers was discussed. TFTs with a 5 nm thick IGZO channel layer showed a carrier mobility almost tripled plus an 18% decrease of total trap density after the SAM treatment. The treated devices also showed a superb air stability with negligible change of electrical performance after being stored in ambient air for a year. Considering the high cost of indium, this approach has a high potential to significantly reduce the manufacturing cost of IGZO-based electronics.
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