期刊
PHYSICAL REVIEW B
卷 101, 期 9, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.094513
关键词
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资金
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [18K03540, 19H01852]
- Grants-in-Aid for Scientific Research [19H01852, 18K03540] Funding Source: KAKEN
High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x = 0.5 (T-c similar to 4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Delta lambda(T) in this superconducting doped topological insulator for x = 0.7, where T-c(,onset) approximate to 5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A(2u), pairing; however, odd-parity A(1u) in pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.
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