期刊
PHYSICAL REVIEW B
卷 101, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.161202
关键词
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资金
- Defense Advanced Research Projects Agency [HR0011-15-2-0037]
- School of Mechanical Engineering, Purdue University
- China Scholarship Council [201706280325]
- China Postdoctoral Science Foundation [2019M663028]
- Office of Naval Research MURI grant [N00014-17-1-2661]
- CAREER Award from the National Science Foundation [1753393]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1753393] Funding Source: National Science Foundation
The fundamental theory of Raman and infrared (IR) linewidth has been well established as the third-order lattice anharmonicity (three-phonon scattering). In this work, we use both rigorous density functional calculations and Raman experiments to find, surprisingly, that the fourth-order anharmonicity universally plays a significant or even dominant role over the third-order anharmonicity at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, GaAs, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and alpha-quartz. This is enabled by the large four-phonon scattering phase space of zone-center optical phonons. Raman measurements on BAs were conducted, and their linewidth verifies our predictions. The predicted infrared optical properties through the Lorentz oscillator model, after including four-phonon scattering, show much better agreement with experimental measurements than those three-phonon-based predictions. Our work advances the fundamental understanding of Raman and IR response and will broadly impact spectroscopy techniques and radiative transport.
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