期刊
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY
卷 18, 期 -, 页码 70-75出版社
SURFACE SCI SOC JAPAN
DOI: 10.1380/ejssnt.2020.70
关键词
Graphene; h-BN; Cu surface; First-principles calculation; Crystal growth
To elucidate bottom-up fabrication of heterostructures of two-dimensional materials such as graphene and h-BN, C atom adsorption on Cu(111) surface partially covered with h-BN or graphene is studied by using the first-principles method with van der Waals correction. It is found that the C monomer more difficultly locates under h-BN than under graphene or on bare Cu, while the C monomer also more hardly diffuses under graphene than under h-BN or on bare Cu. In addition, formation of C dimers is more difficult under graphene than under h-BN or on bare Cu. These results suggest that we can control the heterostructure growth by modulating growth condition. It is further found that the shape of h-BN or graphene flake on the Cu surface depends on whether the edge is terminated with hydrogen (H) or not. Because the bond formation energy of edges with H atoms are different between h-BN and graphene, it is indicated that appropriate choice of H condition will lead us to the intentional formation of lateral and vertical heterostructures.
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