Electric field induced modulation of transverse resistivity anomalies in ultrathin SrRuO3 epitaxial films

We show that transverse resistivity anomalies in SrRuO3 epitaxial thin films, which have been claimed to be a manifestation of the topological Hall effect, can be modulated by applying gate voltages (V-G). The electric field induced effects on the anomalies are found to be the same as those of the saturated anomalous Hall resistivity (rho(AHE)), revealing that the anomalies arise as a result of the coexistence of the intrinsic and extrinsic rho(AHE) Furthermore, the V-G-induced effects on the anomalies are dominated by the V-G-induced changes in the intrinsic rho(AHE) while the extrinsic rho(AHE) remains unchanged under the V-G applications. Our results reveal that electric field induced modulations in the anomalous Hall effect depend on its mechanism.