相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。High-performance AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement
Wei Zhang et al.
APPLIED PHYSICS LETTERS (2015)
Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies
Moritz Brendel et al.
JOURNAL OF APPLIED PHYSICS (2015)
Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors
Fei-Peng Yu et al.
OPTICAL MATERIALS EXPRESS (2015)
AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
E. Cicek et al.
APPLIED PHYSICS LETTERS (2013)
Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (205) reciprocal space maps
D. J. Wallis et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)
Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
J. P. Salvestrini et al.
QUANTUM SENSING AND NANOPHOTONIC DEVICES IX (2012)
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices
H. Srour et al.
APPLIED PHYSICS LETTERS (2011)
Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface
Xiaojuan Sun et al.
APPLIED PHYSICS LETTERS (2011)
High-temperature ultraviolet detection based on InGaN Schottky photodiodes
Liwen Sang et al.
APPLIED PHYSICS LETTERS (2011)
Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
Dabing Li et al.
APPLIED PHYSICS LETTERS (2011)
Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current
F. Xie et al.
ELECTRONICS LETTERS (2011)
Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies
Peta Koteswara Rao et al.
JOURNAL OF APPLIED PHYSICS (2011)
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Yuanjie Lv et al.
JOURNAL OF APPLIED PHYSICS (2011)
Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
Feng Xie et al.
SOLID-STATE ELECTRONICS (2011)
Deep ultraviolet (254 nm) focal plane array
Erdem Cicek et al.
INFRARED SENSORS, DEVICES, AND APPLICATIONS AND SINGLE PHOTON IMAGING II (2011)
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
W. Chikhaoui et al.
APPLIED PHYSICS LETTERS (2010)
Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition
Meei-Ru Chen et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Light intensity dependence of photocurrent gain in single-crystal diamond detectors
Meiyong Liao et al.
PHYSICAL REVIEW B (2010)
Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures
Engin Arslan et al.
APPLIED PHYSICS LETTERS (2009)
AlxGa1-xN solar-blind photodetectors grown by low pressure MOCVD
Xiaoyan Wang et al.
FRONTIERS OF OPTOELECTRONICS (2009)
AlGaN-based high-performance metal-semiconductor-metal photodetectors
Mudu Goekkavas et al.
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS (2007)
Hybrid AIN-SiC deep ultraviolet schottky barrier photodetectors
R. Dahal et al.
APPLIED PHYSICS LETTERS (2007)
Photoluminescence studies of impurity transitions in AlGaN alloys
N. Nepal et al.
APPLIED PHYSICS LETTERS (2006)
Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength
S Butun et al.
APPLIED PHYSICS LETTERS (2006)
Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy -: art. no. 023703
H Zhang et al.
JOURNAL OF APPLIED PHYSICS (2006)
III-nitride UV devices
MA Khan et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Fabrication and characterisation of solar-blind Al0.6Ga0.41N MSM photodetectors
N Biyikli et al.
ELECTRONICS LETTERS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
O Mitrofanov et al.
JOURNAL OF APPLIED PHYSICS (2004)
Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors
O Katz et al.
APPLIED PHYSICS LETTERS (2004)
Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy
EJ Miller et al.
JOURNAL OF APPLIED PHYSICS (2003)
Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
BS Simpkins et al.
JOURNAL OF APPLIED PHYSICS (2003)
Wide-bandgap semiconductor ultraviolet photodetectors
E Monroy et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)
High-responsivity submicron metal-semiconductor-metal ultraviolet detectors
T Palacios et al.
APPLIED PHYSICS LETTERS (2002)
Mechanism of anomalous current transport in n-type GaN Schottky contacts
H Hasegawa et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
EJ Miller et al.
JOURNAL OF APPLIED PHYSICS (2002)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
AlxGa1-xN for solar-blind UV detectors
P Sandvik et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Gain mechanism in GaN Schottky ultraviolet detectors
O Katz et al.
APPLIED PHYSICS LETTERS (2001)
Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain
H Jiang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2001)
Screw dislocations in GaN: The Ga-filled core model
JE Northrup
APPLIED PHYSICS LETTERS (2001)
Deep centers in a free-standing GaN layer
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2001)
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2001)
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
D Qiao et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
