4.6 Article

Enhanced performance of ferroelectric materials under hydrostatic pressure

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JOURNAL OF APPLIED PHYSICS
卷 122, 期 22, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.5003775

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资金

  1. SERB, India
  2. Alexander von Humboldt Foundation
  3. Indian National Science Academy (INSA), Delhi, India
  4. German Science Foundation in the framework of DFGSPP1599 [Xu121/1-2]
  5. NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS) [EEC-1160504]

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Mechanical confinement or restricted degrees of freedom have been explored for its potential to enhance the performance of ferroelectric devices. It presents an easy and reversible method to tune the response for specific applications. However, such studies have been mainly limited to uni- or bi-axial stress. This study investigates the effect of hydrostatic pressure on the ferroelectric behavior of bulk polycrystalline Pb0.99Nb0.02(Zr0.95Ti0.05)(0.98)O-3. Polarization versus electric field hysteresis plots were generated as a function of hydrostatic pressure for a range of operating temperatures (298-398 K). The application of hydrostatic pressure was observed to induce anti-ferroelectric like double hysteresis loops. This in turn enhances the piezoelectric, energy storage, energy harvesting, and electrocaloric effects. The hydrostatic piezoelectric coefficient (d(h)) was increased from 50 pCN(-1) (0MPa) to similar to 900 pC N-1 (265 MPa) and similar to 3200 pCN(-1) (330MPa) at 298K. Energy storage density was observed to improve by more than 4 times under pressure, in the whole temperature range. The relative change in entropy was also observed to shift from similar to 0 to 4.8 J kg(-1) K-1 under an applied pressure of 325MPa. This behavior can be attributed to the evolution of pinched hysteresis loops that have been explained using a phenomenological model. All values represent an improvement of several hundred percent compared to unbiased performance, indicating the potential benefits of the proposed methodology. Published by AIP Publishing.

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