相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Atomic-scale investigation of structural defects in GaN layer on c-plane sapphire substrate during initial growth stage
Tohoru Matsubara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN
I. Belabbas et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 (2016)
Dislocation core structures in Si-doped GaN
S. L. Rhode et al.
APPLIED PHYSICS LETTERS (2015)
Electronic structure of threading dislocations in wurtzite GaN
I. Belabbas et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8 (2015)
Microstructure of porous gallium nitride nanowall networks
David Poppitz et al.
ACTA MATERIALIA (2014)
Structure and electronic properties of mixed (a plus c) dislocation cores in GaN
M. K. Horton et al.
JOURNAL OF APPLIED PHYSICS (2014)
Origin of the unusually strong luminescence of a-type screw dislocations in GaN
M. Albrecht et al.
PHYSICAL REVIEW B (2014)
Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride
J. G. Lozano et al.
PHYSICAL REVIEW LETTERS (2014)
A dissociation mechanism for the [a plus c] dislocation in GaN
P. D. Nellist et al.
ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2013 (EMAG2013) (2014)
Perspectives on future directions in III-N semiconductor research
Charles R. Eddy et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
Mg Doping Affects Dislocation Core Structures in GaN
S. K. Rhode et al.
PHYSICAL REVIEW LETTERS (2013)
a-Type edge dislocation mobility in wurtzite GaN using molecular dynamics
N. Scott Weingarten et al.
SCRIPTA MATERIALIA (2013)
Strain and defects in Si-doped (Al)GaN epitaxial layers
Kamran Forghani et al.
JOURNAL OF APPLIED PHYSICS (2012)
Growth and strain characterization of high quality GaN crystal by HVPE
Huiyuan Geng et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy
Pinar Dogan et al.
CRYSTAL GROWTH & DESIGN (2011)
The effects of Si doping on dislocation movement and tensile stress in GaN films
M. A. Moram et al.
JOURNAL OF APPLIED PHYSICS (2011)
High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask
Chu-Young Cho et al.
OPTICS EXPRESS (2011)
Advances in group III-nitride-based deep UV light-emitting diode technology
M. Kneissl et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
Shih-Chun Ling et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Strain relaxation in AlGaN multilayer structures by inclined dislocations
D. M. Follstaedt et al.
JOURNAL OF APPLIED PHYSICS (2009)
When group-III nitrides go infrared: New properties and perspectives
Junqiao Wu
JOURNAL OF APPLIED PHYSICS (2009)
Reduction of the dislocation density in GaN during low-pressure solution growth
I. Y. Knoke et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Effects of traps formed by threading dislocations on off-state breakdown characteristics in GaN buffer layer in AlGaN/GaN heterostructure field-effect transistors
Akihiro Hinoki et al.
APPLIED PHYSICS EXPRESS (2008)
Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes
M. S. Ferdous et al.
APPLIED PHYSICS LETTERS (2007)
Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes
Martin F. Schubert et al.
APPLIED PHYSICS LETTERS (2007)
Role of inclined threading dislocations in stress relaxation in mismatched layers
P Cantu et al.
JOURNAL OF APPLIED PHYSICS (2005)
Bending of dislocations in GaN during epitaxial lateral overgrowth
S Gradecak et al.
APPLIED PHYSICS LETTERS (2004)
Strain induced deep electronic states around threading dislocations in GaN
L Lymperakis et al.
PHYSICAL REVIEW LETTERS (2004)
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
N Yamamoto et al.
JOURNAL OF APPLIED PHYSICS (2003)
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2002)
Influence of dislocations on electron energy-loss spectra in gallium nitride
CJ Fall et al.
PHYSICAL REVIEW B (2002)
Atomic structure of dislocation cores in GaN -: art. no. 205323
A Béré et al.
PHYSICAL REVIEW B (2002)
Modeling of threading dislocation reduction in growing GaN layers
SK Mathis et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu et al.
JOURNAL OF CRYSTAL GROWTH (2000)