4.6 Article

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

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JOURNAL OF APPLIED PHYSICS
卷 122, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.5002079

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  1. Ministry of Science and Technology, ROC [MOST 104-2221-E-009028-MY3]
  2. Aim for the Top University Plan of the National Chiao Tung University and Ministry of Education, Taiwan, R. O. C [105W985]

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Three-dimensional GaN island growth without any masks was first introduced under high pressure in metalorganic chemical vapor deposition after the growth of AlN and AlGaN buffer layers on Si ( 111) substrate, followed by two-dimensional GaN growth to form a continuous GaN film with improvement of the crystalline quality and surface smoothness. X-ray diffraction and cross-sectional scanning transmission electron microscopy analyses show that a high-quality GaN film can be achieved by bending of edge threading dislocations (TDs) and the formation of dislocation half-loops. It is observed that most of edge TDs bend 90 degrees from the growth direction along c-axis, whereas mixed TDs bend about 30 degrees towards the inclined sidewall facets of the islands. Consequently, a 1.2 mu m thick GaN epitaxial film with a low threading dislocation density of 2.5 x 10 8 cm(-2) and a smooth surface of 0. 38 nm roughness can be achieved on Si substrate. Published by AIP Publishing.

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