期刊
OSA CONTINUUM
卷 3, 期 4, 页码 814-823出版社
OPTICAL SOC AMER
DOI: 10.1364/OSAC.389114
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资金
- Japan Society for the Promotion of Science [18H01479]
- Support Center for Advanced Telecommunications Technology Research Foundation
- Kyoto Technoscience Center
- Grants-in-Aid for Scientific Research [18H01479] Funding Source: KAKEN
Fabricating silicon photonics devices by CMOS-compatible processes is important for applications. Here, we demonstrate a Raman silicon laser based on a heterostructure nanocavity that was fabricated by immersion photolithography using an argon fluoride excimer laser. The Raman laser confines the pump light and the Stokes Raman scattered light in two resonant modes of the nanocavity. By using the presented CMOS-compatible approach, sufficiently high quality-factors can be obtained for both modes. The sample whose frequency spacing of the two resonant modes closely matches the Raman shift of silicon, achieves continuous-wave oscillation with a lasing threshold of 1.8 mu W at room temperature. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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