期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 717, 期 -, 页码 150-155出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.05.082
关键词
Perovskite photodetector; All-solution-processed; Field-effect transistor; Sol-gel SiO2 layer; Specific detectivity
资金
- Key Project of Chinese National Programs for Fundamental Research and Development at Beijing Institute of Technology, Ministry of Education of China [2013CB329202]
- project of State Key Laboratory of Transducer Technology at Beijing Institute of Technology, Ministry of Education of China [SKT1404]
- project of the Key Laboratory of Photoelectronic Imaging Technology and System at Beijing Institute of Technology, Ministry of Education of China [2015OEIOF02]
In this work, we present a high-performance field-effect transistor (FET) based perovskite photodetector by using a sol-gel SiO2 layer as the dielectric layer. The FET-based perovskite photodetector Al(Gate)/SiO2/CH3NH3PbI3/Au(Drain, Source) shows a high responsivity of 10.72 A/W and a high specific detectivity of 6.2 x 10(13) Jones under 0.37 mu W/cm2 532 nm laser, and the underlain mechanism is discussed. Therefore, this kind of all solution-processed method provides a promising way to fabricate high-performance perovskite-based optoelectronic devices on flexible substrates. (C) 2017 Elsevier B.V. All rights reserved.
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