期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 725, 期 -, 页码 253-259出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.06.105
关键词
Bilayer MoS2; Resistive gas sensor; P-type; Sensitivity; Room temperature
资金
- National Natural Science Foundation of China [11504331]
- China Postdoctoral Science Foundation [2015M582196, 2015M582193, 2015M582194]
- Educational Department of Henan Province [15A430048]
- Zhengzhou University [1521317005, 1521317001, 1411317010]
MoS2 atomic layers with a lateral grain size of 50-100 mm were synthesized by a new two-step chemical vapor deposition method. The product was confirmed to be bilayer MoS2 by the characterization of Raman spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. The growth mechanism and the influencing factors during the growth process of the bilayer MoS2 were proposed and the so-obtained large lateral grain sizes of MoS2 atomic layers were attributed to the high surface mobility and enhanced surface evaporation. The resistive gas sensors based on as-prepared bilayer MoS2 films showed a p-type character and achieved a superior sensitivity of 2.6% to 1 ppm NO2 gas at room temperature. (C) 2017 Elsevier B.V. All rights reserved.
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