期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 722, 期 -, 页码 753-759出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.06.178
关键词
Bilay NiOx/TiO2 films; Resistive switching memory; Migration of oxygen vacancy; Ag conduction filamens
资金
- National Natural Science Foundation of China [11304410]
- Youth Science Foundation of Education Ministry of China [QJHKZ [2012] 084]
Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of similar to 10(3), switching cycle endurance for 10(2) and long retention time for 10(4) s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. (C) 2017 Published by Elsevier B.V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据