期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 694, 期 -, 页码 864-868出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.10.076
关键词
Spark plasma sinterng; Thermoelectrics; Nanocomposites
资金
- National Natural Science Foundation of China [5157209, 51272080]
- National Basic Research Program of China [2013CB632500]
- Natural Science Foundation of Hubei Province, China [2015CFB432]
- Open Fund of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology [2016-KF-5]
ZnO/Bi2Te3 (p- and n-type) nanocomposites with 5 vol% nanosized ZnO content are fabricated via ball milling mixing and spark plasma sintering. Herein, ZnO is an intrinsic n-type semiconductor with low thermal conductivity. In ZnO/Bi2Te3 (p- and n-type) composites, ZnO exits as nanoinculsions to more effectively inhabit the phonon transporting, and simultaneously tailor the carrier concentration of composite materials. Ultra low lattice thermal conductivity (0.22-0.3 W/mK(2)) is obtained in both materials. ZnO nanoinclusions can lead to higher carriers and high electronic conductivity of n-type Bi2Te2.7Se0.3 composite material. Since electronic thermal conductivity is dominant (75%) in thermal conductivity, more phonon scattering from defects and nanoinclusions does not effectively improve ZT values of n-type materials. In contrast, while ZnO addition can obviously reduce the carrier concentration and lead to the resistivity's large increase, ZnO nanoinclusions in p-type Bi1.5Sb0.5Te3 composite material would significantly decrease the lattice and total thermal conductivity. As a result, an enhancement (30%) of ZT values (similar to 1.3) can be achieved in composite material compared with p-type ingot. (C) 2016 Elsevier B.V. All rights reserved.
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