期刊
NANOSCALE HORIZONS
卷 5, 期 4, 页码 654-662出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nh00631a
关键词
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资金
- Samsung Research Funding & Incubation Center of Samsung Electronics [SRFC-MA1701-02]
For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (V-TH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three V-TH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show them-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified.
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