期刊
ACS APPLIED NANO MATERIALS
卷 3, 期 3, 页码 2167-2175出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.9b02154
关键词
InGaN/GaN; lead halide perovskites; nanocrystals; down-conversion; resonant energy transfer
资金
- Research and Innovation Foundation of Cyprus, under the New Strategic Infrastructure Units-Young Scientists Program [INFRASTRUCTURES/1216/0004]
- EPSRC, UK [EP/M015181/1]
- University of Cyprus
- European Union [831690]
- Marie Curie Actions (MSCA) [831690] Funding Source: Marie Curie Actions (MSCA)
- EPSRC [EP/P006973/1] Funding Source: UKRI
In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr(3) nanocrystals (NCs) and near-infrared (IR) FAPbI(3) NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride-NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as similar to 83 +/- 6% in the green and similar to 74 +/- 5% in the near-IR.
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