期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 696, 期 -, 页码 150-154出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.11.244
关键词
Sb material; Oxygen-doping; Thermal stability; High-speed
资金
- Natural Science Foundation of Jiangsu Province [BK2015020024]
- Changzhou Science and Technology Bureau [CJ20160028, CJ20159049]
- Basic Research Program of Jiangsu Education Department [15KJB430012, 16KJB140004]
- Open Fund of State Key Laboratory of Functional Materials for Informatics [KYZ14031]
- Qing Lan Project
The O-doped Sb materials were proved to have higher crystallization temperature (similar to 205 degrees C), larger crystallization activation energy (3.95 eV) and better data retention ability (143 degrees C for 10 years). The band gap was broadened by O-doping and the grain size was refined. The formation of Sb oxide increased the binding energy. The fast phase change speed was obtained for O-doped Sb materials by picosecond laser technology. After O-doping, the phase change film had a smaller surface roughness (1.05 nm). (C) 2016 Elsevier B.V. All rights reserved.
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