4.6 Article

High-fidelity geometric gate for silicon-based spin qubits

期刊

PHYSICAL REVIEW A
卷 101, 期 5, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevA.101.052302

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资金

  1. Key-Area Research and Development Program of GuangDong Province [2018B030326001]
  2. National Natural Science Foundation of China [11905065, 11874156, 11874312]
  3. China Postdoctoral Science Foundation [2019M652928]
  4. National Key R&D Program of China [2016 YFA0301803]
  5. Research Grants Council of Hong Kong [CityU 11303617, CityU 11304018]
  6. Guangdong Innovative and Entrepreneurial Research Team Program [2016ZT06D348]

向作者/读者索取更多资源

High-fidelity manipulation is key to the physical realization of fault-tolerant quantum computation. Here, we present a protocol to realize universal nonadiabatic geometric gates for silicon-based spin qubits. We find that the advantage of geometric gates over dynamical gates depends crucially on the evolution loop for the construction of the geometric phase. Under appropriate evolution loops, all geometric single- and two-qubit gates can outperform their dynamical counterparts for both systematic and off-resonance noises. We also perform randomized benchmarking using noise amplitudes consistent with experiments in silicon. For the static noise model, the averaged fidelities of geometric gates are around 99.90% or above, while for the time-dependent 1/f -type noise, the fidelities are around 99.98% when only the off-resonance noise is present. We also show that the improvement in fidelities of the geometric gates over dynamical ones typically increases with the exponent alpha of the 1/f noise, and the ratio can be as high as 4 when alpha approximate to 3. Our results suggest that geometric gates with judiciously chosen evolution loops can be a powerful way to realize high-fidelity quantum gates.

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