期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 22, 期 10, 页码 5667-5672出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0cp00298d
关键词
-
资金
- DFG [Graphene SPP 1459, SFB TRR 173 Spin+X]
- Max Planck Society
- Seventh Framework Program within the project MoQuas Molecular Quantum Spintronics [FET-ICT-2013-10 610449]
- Graphene Flagship
- Excellence Initiative by the Graduate School Materials Science in Mainz (GSC 266)
- MAINZ Graduate School of Excellence [GSC 266]
Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据