期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 9, 期 4, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ab89b7
关键词
(AlGa)2O3 film; crystal quality; grown mode; optical property; grown temperature
资金
- National Natural Science Foundation of China [61774072]
- National Key RD Plan [2016YFB0400600, 2016YFB0400601]
- National Science Foundation of China [61774072, 61574026, 11675198, 11875097, 11975257]
- Fundamental Research Funds for the Central Universities [DUT19LK45]
- Dalian science and technology innovation fund [2018J12GX060]
Beta-(AlxGa1-x)(2)O-3 thin films were prepared on c-plane sapphire substrates by low-pressure reactive vapor deposition at different temperature. The crystal structure, surface morphology, and optical properties of beta-(AlxGa1-x)(2)O-3 films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), and transmission spectra. The beta-(AlxGa1-x)(2)O-3 films were preferred [(2) over bar 01] orientation. The film grown at 1400 degrees C has narrower full width half maximum (FWHM) than grown at 1450 degrees C. As the growth temperature increases, the Al group decreases. The Al content of beta-(AlxGa1-x)(2)O-3 films grown at 1400 degrees C and 1450 degrees C are x = 0.524 and x = 0.489, respectively. The SEM and AFM images showed different growth mode for beta-(AlxGa1-x)(2)O-3 films grown at 1400 degrees C and 1450 degrees C and their root-mean-square roughness (RMS) values are 5.27 nm and 5.33 nm, respectively. All the prepared beta-(AlxGa1-x)(2)O-3 films have high transmittances exceeding 90% in visible region and large optical bandgap above 6 eV. These results indicate that low-pressure reactive vapor deposition technology is a promising growth technology for a high quality beta-(AlGa)(2)O-3 films with tunable properties. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
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