期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 9, 期 4, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ab8b4b
关键词
Ga2O3; gallium oxide; Microelectronics - Semiconductor Materials; Microelectronics - Semiconductor Processing; Nanoscale materials
资金
- National Research Foundation of Korea (NRF) through the Basic Science Research Program [2017R1A2B4012278]
- Center for Advanced SoftElectronics - Ministry of Science, ICT and Future Planning, through the Global Frontier Project [CASE-20110031638]
- National Research Foundation of Korea [2017R1A2B4012278] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Tin (Sn)-doped beta phase gallium oxide (beta-Ga2O3) nanostructures at different Sn concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn-doped beta-Ga2O3 nanostructures are characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and absorbance spectroscopy. In addition, their photocatalytic activity is evaluated by observing methylene blue degradation under ultraviolet light (254 nm) irradiation. The photocatalytic activity of the Sn-doped (0.7 at%) beta-Ga2O3 nanostructures is significantly enhanced compared to that of intrinsic beta-Ga2O3 nanostructures due to the elevated charge separation. Excessive Sn concentrations (exceeding 2.2 at%) above the solid solubility limit of the Sn in beta-Ga2O3 nanostructures lead to SnO2 and SnO precipitation. The presence of SnO2 and SnO degrades the photocatalytic efficiency in the beta-Ga2O3 nanostructures. The results suggest new opportunities for the synthesis of highly effective beta-Ga2O3-based photocatalysts for applications in environmental remediation, disinfection, and selective organic transformations. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
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