期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 9, 期 4, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ab8b4c
关键词
Ga2O3; gallium oxide; CVD; Chemical Vapor Deposition
资金
- Russian Science Foundation [19-19-00409]
- Russian Science Foundation [19-19-00409] Funding Source: Russian Science Foundation
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 degrees C-600 degrees C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and (201) bulk beta-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
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