期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 56, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.086501
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资金
- JSPS KAKENHI Grant [26709020, 16K13673]
- Collaborative Research Program of the Research Institute for Applied Mechanics, Kyushu University
- Grants-in-Aid for Scientific Research [16K13673, 26709020, 17K05044] Funding Source: KAKEN
The electrical properties of Schottky barrier diodes (SBDs) on a (001) beta-Ga2O3 substrate were characterized and correlated with wet etchingrevealed crystal defects below the corresponding Schottky contacts. The etching process revealed etched grooves and etched pits, indicating the presence of line-shaped voids and small defects near the surface, respectively. The electrical properties (i.e., leakage currents, ideality factor, and barrier height) exhibited almost no correlation with the density of the line-shaped voids. This very weak correlation was reasonable considering the parallel positional relation between the line-shaped voids extending along the [010] direction and the (001) basal plane in which the voids are rarely exposed on the initial surface in contact with the Schottky metals. The distribution of small defects and SBDs with unusually large leakage currents showed similar patterns on the substrate, suggesting that these defects were responsible for the onset of fatal leak paths. These results will encourage studies on crystal defect management of (001) beta-Ga2O3 substrates for the fabrication of devices with enhanced performance using these substrates. (C) 2017 The Japan Society of Applied Physics
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