期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 56, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.070306
关键词
-
资金
- Super Cluster Program from the Japan Science and Technology Agency
Phosphorus or aluminum ions were directly implanted into semi-insulating 4H-SiC substrates with no epitaxial layers to form n-or p-type layers, respectively, with doping densities in the range from 10(17) to 10(19)cm(-3). The electrical properties of these implanted layers annealed at 1650 degrees C were characterized by Hall effect measurements in the temperature range of 160-900 K. The electrical activation ratios of implanted dopants were 88-98%. The density of compensating defects was higher in Al+-implanted layers than in P+-implanted ones. The mobilities of the implanted layers were mostly comparable to those of epitaxial layers in the doping range investigated. (C) 2017 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据