4.3 Article Proceedings Paper

Domain walls and defects in ferroelectric materials

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 56, 期 10, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.10PA01

关键词

-

资金

  1. Swiss National Science Foundation [200021-159603]
  2. Slovenian Research Agency [P2-0105, P2-0393, J2-5483, J2-6754]
  3. Swiss National Science Foundation (SNF) [200021_159603] Funding Source: Swiss National Science Foundation (SNF)

向作者/读者索取更多资源

The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged domain walls in enhanced properties of domain engineered BaTiO3 crystals, and give evidence of a large concentration of specific charged point defects within domain walls in BiFeO3 ceramics. (C) 2017 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据