期刊
DATA IN BRIEF
卷 30, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.dib.2020.105652
关键词
Hydrocarbon; High-k dielectrics; Chemical vapor deposition; Atomic force microscopy
资金
- Chungnam National University
This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma chemical vapor deposition with CH4 gas and a gas mixture consisting of 10% H-2 and 90% Ar. The AFM images were obtained by tapping mode. The AFM results provide the surface topography, roughness, and thickness of the HC films as a function of growth temperature, which are essential data for high-k gate dielectrics of metal-insulator-semiconductor device applications. This data article is related to the article entitled, Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices(Kim et al., 2020) [1]. (C) 2020 The Authors. Published by Elsevier Inc.
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