期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 8, 期 25, 页码 8515-8520出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc02192j
关键词
-
资金
- Strategic Priority Research Program of CAS [XDB1603]
- National Natural Science Foundation of China [61875211, 61674023, 61520106012, 61975023, 61521093]
- International S&T Cooperation Program of China [2016YFE0119300]
- Open Fund of the State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics)
- Program of Shanghai Academic/Technology Research Leader [18XD1404200]
- Fundamental Research Funds for the Central Universities [2018CDYJSY0055, 106112017CDJQJ128837]
- Chongqing Research Program of Basic Research and Frontier Technology [cstc2017jcyjB0127]
- Ministry of Industry and Information Technology Green Manufacturing System Integration Project [2018ZZCQ105]
Recently, solution-processed conventional I-III-VI(2)quantum dots (QDs) demonstrated a potential optical amplification application based on superior optical properties. Nonetheless, exploiting the potential of this type of material as a gain medium for optical amplification devices is still scarce, rendering application prospect restricted. Herein, for the first time, we report the amplified spontaneous emission (ASE) action using AgInS2(AIS) QDs as the gain medium. ASE with an ultra-low threshold (31.58 mu W cm(-2)) was demonstrated by combining highly reflective distributed Bragg reflectors (DBR) with AIS QDs. Furthermore, the relationship between the number of layers of the DBR mirrors and the ASE performance is systematically discussed, indicating that the seven-layer DBR is a desirable device structure with the best ASE from AIS QDs. These consequences unambiguously uncover the significant feasibility of the traditional AIS QDs as a photonic resource, simultaneously demonstrating the huge potential and promising applications of as-designed devices for optical amplification.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据