期刊
NANOPHOTONICS
卷 9, 期 7, 页码 1963-1972出版社
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2019-0448
关键词
third-order nonlinearity; quantum-confinement; carrier dynamics; two-dimensional; tin sulfide (SnS)
资金
- National Natural Science Fund [61435010, 61805146, 61905157]
- Science and Technology Innovation Commission of Shenzhen [KQTD2015032416270385]
- Science and Technology Development Fund [007/2017/A1]
- Macao SAR, China
- Postdoctoral Research Foundation of China [2019M653017]
- Postgraduate Innovation Development Fund Project of Shenzhen University [PIDFP-ZR2018004]
Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility Im chi(3) is enhanced from -(6.88 +/- 0.10) x 10(-14) esu to -(1590 +/- 0.27) x 10(-14) esu by the size-related quantum confinement in layered SnS nanosheets. Due to the energy level alignment, a phonon-bottleneck effect is observed, which leads to a prolonged carrier lifetime. These results provide a platform for actively tuning the linear and nonlinear optics, and pave the way for designing SnS-based tunable and anisotropic optoelectronic devices.
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