期刊
NANOPHOTONICS
卷 9, 期 8, 页码 2459-2466出版社
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2019-0539
关键词
quasi-2D Te nanosheets; photodetector; solar-blind deep ultraviolet; FET
资金
- National Natural Science Foundation of China [61605131, 61905157]
- Natural Science Foundation of Guangdong Province for Distinguished Young Scholars [2018B030306038]
- Science and Technology Innovation Commission of Shenzhen [KQJSCX20180328095501798, JCYJ20180507182047316]
- Postdoctoral Research Foundation of China [2019M653017]
- Educational Commission of Guangdong Province [2016KCXTD006]
- Science and Technology Development Fund, Macao SAR, China [007/2017/A1, 132/2017/A3]
- Instrumental Analysis Center of -Shenzhen University
Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 x 10(4) A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 x 10(6)% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.
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