期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 8, 期 26, 页码 8736-8746出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc01675f
关键词
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资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- DOE, SC, BES [DE-AC02-76SF00515]
- National Science Foundation Division of Materials Research [1555340]
- National Science Foundation Graduate Research Fellowship [1646713]
- CoorsTek Fellowship in Advanced Ceramics at the Colorado School of Mines
- Division Of Graduate Education
- Direct For Education and Human Resources [1646713] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1555340] Funding Source: National Science Foundation
Cation-disordered ZnGeN2 shows promise for application as a blue-green emitter in light-emitting devices, but more foundational work is necessary to understand structure-property relationships. In this work, we present a combinatorial exploration of the experimental phase space of wurtzite (cation-disordered) ZnGeN2 using high-throughput co-sputtering. Structure, morphology and optical properties are explored as a function of cation composition and synthesis temperature. ZnGeN2 is found to crystallize in the wurtzite structure ranging from Zn-rich to Ge-rich compositions. X-ray diffraction refinements reveal a continuous shift in cell volume with off-stoichiometry, indicating alloy-like structural behavior. The optical absorption of all films examined is lower in energy than the value predicted for cation-ordered ZnGeN2, suggesting that cation disorder is decreasing the bandgap. Additionally, the absorption threshold shifts continuously to higher energy for Ge-rich samples, consistent with bandgap shifts due to alloy-like structural behavior. Defect formation energy diagrams are calculated to help guide understanding of off-stoichiometry from a defect complex perspective. This work paves the way toward use of ZnGeN2 as a bandgap-tunable optoelectronic semiconductor.
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