期刊
IEEE ACCESS
卷 8, 期 -, 页码 4924-4934出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2019.2962869
关键词
Electrode structure engineering; resistive switching uniformity; RRAM device reliability
资金
- National Research Foundation of Singapore Program [NRF-CRP13-2014-02]
- EDB-IPP Program [RCA-16/335]
- Science and Technology Program of Guangdong Province of China [2016A050502058]
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electrode angle (EA), electrodes spacing (ES) and electrode trench depth (ETD) associated with the double wedge-like electrodes of the filament-type RRAM devices are studied for the first time. Our experimental results show that apart from the resistive switching uniformity, the reliability performance such as cycling endurance and data retention are significantly improved for the device with small EA (90 degrees), narrow ES (440 nm) and deep ETD (90 nm) owing to the electric field confinement and enhancement. Thus, this new approach can be served as a guideline for the design and optimization of the filament-type RRAM devices.
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