期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 9, 期 6, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/aba406
关键词
Electron Devices; gallium oxide; Microelectrnics; Semiconductor Materials
资金
- KERI Primary Research Program of MIST/NST [20A01012]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20172010104830]
- National Research Foundation (NRF) of Korea - Ministry of Science and ICT [NRF-2017M1A2A2087351, NRF-2018R1D1A1A09083917]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20202010100010] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [20A01012] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The low thermal conductivity and the absence of effective acceptors limit the potential utility of beta-Ga(2)O(3)electronics. Herein, to generate an n-channel beta-Ga(2)O(3)heterojunction field-effect transistor (FET) with efficient thermal management, n-type beta-Ga(2)O(3)as a channel layer was integrated with p-type 4H-SiC as both a gate and a thermal drain via van der Waals interaction. The n-p beta-Ga2O3/4H-SiC heterojunction displayed typical rectifying behavior with an ideality factor of 1.4 and a rectification ratio of similar to 10(7). The fabricated beta-Ga(2)O(3)heterojunction FET operated in depletion mode with current saturation above the pinch-off voltage, which is consistent with the results of numerical device simulation. Excellent output and transfer characteristics were observed, including no hysteresis, low subthreshold swing (similar to 114 mV dec(-1)), and a high output current on/off ratio (similar to 10(8)). The numerical heat simulation indicated that the integration of beta-Ga(2)O(3)with 4H-SiC could greatly lower the peak operating temperature (by >70 degrees C), thereby improving the long-term reliability and stability of the beta-Ga2O3-based electronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据