4.6 Article

Local manipulation of metamagnetism by strain nanopatterning

期刊

MATERIALS HORIZONS
卷 7, 期 8, 页码 2056-2062

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0mh00601g

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资金

  1. Spanish Ministry of Economy and Competitiveness, through the ''Severo Ochoa'' Programme for Centres of Excellence in RD [SEV-2015-0496, SEV-2017-0706]
  2. FEDER [MAT2017-85232-R, RTI2018-095303-B-C53, MAT2014-56063-C2-1-R, MAT2017-86357-C3-1-R]
  3. Generalitat de Catalunya [2014 SGR 734, 2017 SGR 292]
  4. AGAUR [2018 LLAV 00032, 2019 LLAV 00050]
  5. European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant [665919]
  6. European Research Council under the SPIN-PORICS 2014Consolidator Grant [648454]
  7. European Research Council under the MAGIC-SWITCH 2019-Proof of Concept Grant [875018]
  8. CERCA Programme/Generalitat de Catalunya
  9. RyC contract [RYC-2017-22531]
  10. National Science Centre of Poland (NCN) by the PRELUDIUM project [UMO-2015/17/N/ST5/01988]
  11. SONATA Project [UMO-2016/23/D/ST3/02121]
  12. CSIC Open Access Publication Support Initiative through its Unit of Information Resources for Research (URICI)
  13. [MAT2015-73839-JIN]

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Among metamagnetic materials, FeRh alloys are technologically appealing due to their uncommon antiferromagnetic-to-ferromagnetic metamagnetic transition which occurs at a temperature T-star just above room temperature. Here, a controlled increase of T-star (Delta T-star similar to 20 degrees C) is induced in pre-selected regions of FeRh films via mechanical strain nanopatterning. Compressive stresses generated at the vicinity of predefined nanoindentation imprints cause a local reduction of the FeRh crystallographic unit cell parameter, which leads to an increase of T-star in these confined micro-/nanometric areas. This enhances the stability of the antiferromagnetic phase in these localized regions. Remarkably, generation of periodic arrays of nanopatterned features also allows modifying the overall magnetic and electric transport properties across large areas of the FeRh films. This approach is highly appealing for the design of new memory architectures or other AFM-spintronic devices.

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