4.6 Article

Magnetotransport properties of the topological nodal-line semimetal CaCdSn

期刊

PHYSICAL REVIEW B
卷 102, 期 3, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.035164

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资金

  1. IIT Kanpur
  2. SERB India [CRG/2018/000220]
  3. U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences [DE-FG02-07ER46352]
  4. National Energy Research Scientific Computing Center through DOE [DE-AC02-05CH11231]
  5. Academia Sinica (Taiwan) under the Innovative Materials and Analysis Technology Exploration program [AS-iMATE-107-11]
  6. Science and Engineering Research Board (SERB)
  7. Department of Science and Technology (DST) of the government of India

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Topological nodal-line semimetals support protected band crossings, which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the Gamma point in the absence of spin-orbit coupling effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility (mu approximate to 3.44 x 10(4) cm(2) V-1 s(-1)) and displays a field-induced metal-semiconductor-like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear nonsaturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures (approximate to 7.44 x 10(3)% and approximate to 1.71 x 10(3)%, respectively, at 4 K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.

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