期刊
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
卷 128, 期 8, 页码 539-543出版社
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
DOI: 10.2109/jcersj2.20019
关键词
Ferroelectric HfO2-based films; Thick films; RF magnetron sputtering method; Orientation control
资金
- MEXT Elements Strategy Initiative to Form Core Research Center [JPMXP0112101001]
- Center of Innovation Program from Japan Science and Technology Agency
- New Energy and Industrial Technology Development Organization (NEDO)
- Japan Society for the Promotion of Science (JSPS) KAKENHI [18H01701, 18K19016, 19H00758, 19K14921]
- Grants-in-Aid for Scientific Research [18H01701, 18K19016, 19K14921] Funding Source: KAKEN
Y-doped HfO2 films with various thicknesses were prepared on (100)-oriented [10 wt.% Sn-doped In2O3, ITO]//(100) [yttria-stabilized zirconia, YSZ], and (111)ITO//(111)YSZ substrates by a radio-frequency magnetron sputtering method. Almost a single phase of orthorhombic symmetry was obtained for all films. {100}-oriented epitaxial films were obtained on (100)ITO//(100)YSZ substrates, while the film orientation changed from {111} to {100} with increasing film thickness on (111)ITO//(111)YSZ substrates. {100}-oriented epitaxial Y-doped HfO2 films were also obtained on (100)-oriented epitaxial ITO layers on (100)YSZ//(001)Si substrates. Ferroelectricity was observed for all films. Their remanent polarization (P-r) and coercive fields (E-c) were about 5 mu C/cm(2) and 1MV/cm, respectively, indicating that Pr and Ec were almost independent of the film thickness and kind of substrate. (C) 2020 The Ceramic Society of Japan. All rights reserved.
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