Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC

Here we reported an about 2 at.% Fe-implanted p-type 4H-SiC Diluted Magnetic Semiconductor (DMS). Scanning Transmission Electron Microscopy (STEM) and Atom Probe Tomography (APT) techniques were used to investigate the origins of ferromagnetic behavior. Nanoparticles (1-9 nm) were identified to be Fe3Si, Fe2Si, Fe5Si3, Fe3Si2, FeSi and FeSi2 phases, the distribution of which is related to Fe distribution. The magnetic properties were studied by Conversion Electron Mossbauer Spectroscopy (CEMS) and Superconducting Quantum Interference Device (SQUID) techniques. The contributions of these Fe-silicides to the ferromagnetism are thus discussed from a quantitative perspective. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.