Realistic dielectric response of high temperature sintered ZnO ceramic: a microscopic and spectroscopic approach

High temperature sintering (1200-1400 degrees C) has been performed on ZnO ceramics. An X-ray Absorption Fine Structure (XAFS) study shows that high sintering temperature introduces a constant amount of V(O)and V(Zn)defects without any significant effect on the crystal or electronic structure of Wurtzite ZnO. The combined effects of grain boundaries and voids are considered responsible for the apparent colossal dielectric constant (epsilon ') > 10(4)at low frequency (similar to 10(2)Hz) for all the sintered ZnO ceramics. The superior contact among grains of the ZnO-1200 sample enhances both the interfacial and orientational polarization of the Zn2+-V(O)dipoles, which results in the increase of low and high frequency dielectric constants (epsilon ') and the corresponding dielectric loss (tan delta) also increases. On the other hand, high temperature sintering of ZnO at 1300 degrees C and 1400 degrees C introduces voids at the expense of reduced grain and grain boundary contact areas, thus affecting both the interfacial and orientational polarization with corresponding reduction of dielectric constant (epsilon ') and dielectric loss. Orientational polarizations due to Zn2+-V(O)dipoles are suggested to remain fixed and it is the microstructure which controls the dielectric properties of high temperature sintered ZnO ceramics.