期刊
PHYSICAL REVIEW B
卷 102, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.075138
关键词
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资金
- National Key Research and Development Program [2016YFA0300404]
- National Nature Science Foundation of China [11674326, 11874357, 11774351, 11974061]
- National Natural Science Foundation of China
- Chinese Academy of Sciences' Large-Scale Scientific Facility [U1832141, U1932217]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH015]
- Users with Excellence and Scientific Research Grant of Hefei Science Center of CAS [2018HSC-UE011]
- Open Project of State Key Laboratory of Superhard Materials, Jilin University [201902]
The intriguing electronic phase diagram involving charge density wave (CDW) transitions in the TaS2 system has been widely investigated over the past decade, especially for the 1T and 2H phases. 4H(b)-TaS2, regarded as the natural heterostructure that combines the characteristics of 1T and 2H-TaS2, has also been the focus recently, due to the prospects for fundamental research and device applications. Here, we have systematically investigated the electrical transport properties of 4H(b)-TaS2 single crystals combined with the band structure calculations and found that the low-temperature phase of candidate chiral superconductor 4H(b)-TaS2 (T-c similar to 3.5 K) at normal state is not the simple CDW but exhibits a strong magnetic field dependence. The most significant result is the emergence of the large magnetoresistance (MR), which may originate from the high mobility of holes and partial compensation. In addition, the symmetry of MR under the low magnetic field has also changed significantly in 4H(b)-TaS2, which is closely related to the CDW structures formed in the H layers at 22 K. The results are conducive to the understanding of the mechanism of MR appearing in layered CDW compounds, and the presence of MR in 4H(b)-TaS2 suggests the potential applications for functional devices in the future.
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