4.6 Article

Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator

期刊

ACS APPLIED ELECTRONIC MATERIALS
卷 2, 期 7, 页码 1953-1959

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00250

关键词

graphene/silicon hybrid diode; terahertz modulation; gold nanoparticles; modulation mechanism; band theory

资金

  1. National Key Research and Development Program of China [2018YFE0115500]
  2. National Natural Science Foundation of China [51772045, 51572042, 61734002]
  3. Nature Key Research and Development Program [2016YFA0300801]
  4. National Key Scientific Instrument and Equipment Development Project [51827802]
  5. Sichuan Science and Technology Project [2019YJ0186]

向作者/读者索取更多资源

Graphene/silicon hybrid diodes have been proven efficient for broadband terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (similar to 93%) and modulation rate (similar to 4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.

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