期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 2, 期 7, 页码 1934-1942出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00245
关键词
negative photoconductivity; infrared detection; hot electron trapping; germanium nanowire; diameter-dependent photoconductance
资金
- Science and Engineering Research Board-Department of Science and Technology (SERB-DST)
- IMPacting Research Innovation and Technology (IMPRINT)
- Science Foundation Ireland [14/IA/2513]
- Science Foundation Ireland (SFI) [14/IA/2513] Funding Source: Science Foundation Ireland (SFI)
Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carriers in n-Ge NWs in the presence of infrared light. The trapping of photocarriers leads to high recombination of carriers in the presence of light, which is dominant in the n-type devices. Furthermore, a carrier trapping model was used to investigate the trapping and detrapping phenomena and it was observed that the NPC in n-Ge occurred, because of the fast trapping of mobile charge carriers by interfacial states. The performance of n-type devices was compared with p-type NW detectors, which shows the conventional positive photoconductive behavior with high gain of 10(4). The observed results can be used to study the application of Ge NWs for various optoelectronic applications involving light tunable memory device applications.
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