An unusual high-frequency ferroelectric obtainedviathe post-synthetic modification of a metal-organic framework

Ferroelectrics as crucial functional materials have attracted much interest since ferroelectricity was discovered in 1920. Herein, an unusual high-frequency ferroelectric, (CH3)(2)NH center dot HCl@Cd-MOF, was successfully obtained through a dual-step synthetic methodology. A chiral porous Cd-MOF with a channel size of 6.8 x 6.8 angstrom was synthesizedviaself-assembly of chiral Schiff-base ligands and Cd(2+)ions. Subsequently, polarizable (CH3)(2)NH center dot HCl was introduced into the channels of the Cd-MOF and hence the host-guest system (CH3)(2)NH center dot HCl@Cd-MOF was formed. The as-synthesized (CH3)(2)NH center dot HCl@Cd-MOF displays obvious ferroelectricity at a high frequency of 1 kHz. Such a high-frequency ferroelectric is extremely rare among MOF-based ferroelectric materials, and the high-frequency ferroelectricity means that (CH3)(2)NH center dot HCl@Cd-MOF has potential for use in ferroelectric memories. The results again demonstrate that post-synthetic modification is a promising approach for achieving rational and precise design of ferroelectric materials.