期刊
INFRARED PHYSICS & TECHNOLOGY
卷 85, 期 -, 页码 280-286出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.infrared.2017.01.022
关键词
Atomic layer deposition; ZnS film; Low growth temperature
资金
- National Natural Science Foundation of China [6070612]
- Defense Technology Innovation Fund from Chinese Academy of Sciences [cxjj-10m29]
ZnS films grown on GaAs and HgCdTe substrates by atomic layer deposition (ALD) under very low temperature were investigated in this work. ZnS films were grown under several temperatures lower than 140 degrees C. The properties of the films were investigated with high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed the ZnS films were polycrystalline. The growth rate monotonically decreased with temperature, as well as the root mean square (r.m.$) roughness measured by AFM. XPS measurement revealed the films were stoichiometric in Zn and S. (C) 2017 Published by Elsevier B.V.
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