期刊
INFRARED PHYSICS & TECHNOLOGY
卷 85, 期 -, 页码 287-292出版社
ELSEVIER
DOI: 10.1016/j.infrared.2017.07.001
关键词
InGaAs focal plane array; Numerical simulation; Modulation transfer function; Carrier recombination
资金
- National Basic Research Program of China (973 Program) [2015CB351902]
- National Natural Science Foundation of China [U143231]
- National Key RAMP
- D Program of China [2016YFB0402402, 2016YFB0400601]
- Key Research Program of Frontier Sciences, CAS [QYZDY-SSW-JSC004]
- Beijing Science and Technology Projects [Z151100001615042]
Three-dimensional simulation methodology has been used to evaluate the performance of lattice matched InGaAs/InP double layer planar heterointerface detector arrays. The device characteristics under optical illumination and dark conditions have been computed. The modulation transfer function (MTF) profiles have been calculated with varying device geometries and carrier dynamics. It is found that the p well diffusion radius and minority carrier recombination play important roles in the MTF behaviors of dense arrays. Moderate p well diffusion dimension should be used to balance the device performances between the dark current and MTF profile. Moreover, better MTF characteristic under low light condition can be achieved with higher quality material which has longer recombination lifetime. The influences of underlying mechanisms including photon generated carriers diffusion and carrier recombination processes have been discussed. These simulation methods and results should provide a useful tool for the evaluation and improvement of imaging power of InGaAs focal plane arrays. (C) 2017 Elsevier B.V. All rights reserved.
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