期刊
OPTICAL COMPONENTS AND MATERIALS XVII
卷 11276, 期 -, 页码 -出版社
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.2548309
关键词
phase change materials; silicon photonics; integrated photonics devices; non-volatile; reconfigurable photonics; optical switches
类别
资金
- SRC [2017-IN-2743]
- Intel
- Samsung GRO
- AFOSR [FA9550-17-C-0017]
- Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)
- Sloan Foundation
- National Science Foundation [NNCI-1542101, 1337840, 0335765]
- National Institutes of Health
- Molecular Engineering & Sciences Institute
- Washington Research Foundation
- M. J. Murdock Charitable Trust
- Altatech
- ClassOne Technology
- GCE Market
- SPTS
- Clean Energy Institute
- [NSFEFRI-1640986]
The traditional ways of tuning a Silicon photonic network are mainly based on the thermal-optic effect or the free carrier effect of silicon. The drawbacks of these methods are the volatile nature and the extremely small change in the complex refractive index (Delta n<0.01). In order to achieve low energy consumption and smaller footprint for applications such as photonic memories or computing, it is essential that the two optical states of the system exhibit high optical contrast and remain non-volatile. Phase change materials (PCMs) such as GST provide a solution in that it exhibits drastic contrast in refractive index between the two non-volatile crystallographic states which can be switched reversibly. Here, we first show that GST can be integrated with a Si ring resonator to demonstrate a quasi-continuous optical switch with extinction ratio as high as 33dB. Secondly, we demonstrated GST-integrated 1x2 and 2x2 Si photonic switches using a three-waveguide coupler design which exhibits a low insertion loss of similar to 1dB and a compact coupling length of similar to 30 mu m. The crosstalk is as small as -10dB over a bandwidth of 30nm. Lastly, we explore the potential of two emerging PCMs Sb2S3 and GeSe for extreme low loss operation of reconfigurable photonic integrated circuit (PIC).
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