期刊
ACS APPLIED NANO MATERIALS
卷 3, 期 9, 页码 8794-8802出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c01583
关键词
TiS3; high pressure; Raman spectroscopy; phonons; 2D semiconductors
资金
- Science and Engineering Research Board (SERB), Government of India [CZ.02.2.69/0.0/0.0/16_027/0008355]
Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane A(g) Raman modes in high quality few-layer titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient. Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated by using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent A(g) Raman bands; a band at 557 cm(-1) softens under compression, and others at 175, 300, and 370 cm(-1) show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line width of the soft phonon about 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from the Ag soft mode frequency (557 cm(-1)) versus pressure extrapolation curve, consistent with recently reported theoretical predictions. Using the experimental mode Gruneisen parameters gamma(i) of Raman modes, we estimated the cross-plane thermal expansion coefficient C-v of the TiS3 nanoribbons at ambient phase to be 1.321 x 10(-6) K-1. The observed results are expected to be useful in calibration and performance of next-generation nanoelectronics and optical devices under extreme stress conditions.
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